PART |
Description |
Maker |
MP6901 |
4 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching High Power Switching Applications / Hammer Drive
|
TOSHIBA[Toshiba Semiconductor]
|
BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc. STMicroelectronics
|
MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
FS10UM-12 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE DC SWITCHING POWER SUPPLY PROGRAMMABLE 1-40VDC 0-5A
|
Mitsubishi Electric Corporation Powerex Power Semiconductors
|
2SJ550 2SJ550L 2SJ550S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor] http://
|
2SJ528 2SJ528L 2SJ528S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
MP4703 E002536 |
HIGH POWER , HIGH SPEED SWITCHING APPLICATIONS HA MMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
MP420807 |
High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
|
Toshiba Semiconductor
|
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|